UMN Center for Quantum Materials scientists demonstrated the first molecular beam epitaxy (MBE) growth of YTiO3 films. Through a combined study of thin films and floating-zone grown bulk single crystals, a thermally-activated conduction mechanism involving positively charged carriers was revealed. Together with scientists at the University of Delaware, a combined theoretical and experimental investigation of the electronic structure and charge transport properties provided a definite answer to the governing mechanism for conduction in YTiO3 and related materials. The team has demonstrated that the charge transport in YTiO3 (a ferromagnetic Mott insulator) is due to small hole polaron migration and that the Mott-Hubbard gap of YTiO3 is ~ 1.5 eV.